6N04N009 Datasheet





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6N04N009 Datasheet - Power-Transistor

6N04N009   6N04N009  

Datasheet: 6N04N009 datasheet

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Description: IAUC120N04S6N009 OptiMOS™- 6 Power-Tr ansistor Product Summary Features • OptiMOS™ - power MOSFET for automoti ve applications VDS RDS(on),max ID 40 V 0.9 m 120 A PG-TDSON-8 • N-cha nnel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operatin g temperature • Green Product (RoHS c ompliant) 1 1 • 100% Avalanche test ed Type IAUC120N04S6N009 Package PG-T DSON-8 Marking 6N04N009 Maximum ratin gs, at T j=25 °C, unless otherwise spe cified Parameter Continuous drain curr ent1) Symbol Conditions I D T C=25° C, V GS=10V T C=100°C, V GS=10V2) Pu lsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source vo


Manufacture Part Number Description

Infineon

6N04N009

Power-Transistor




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