CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High...
CoolMOSTM Power Transistor
Features Lowest figure-of-merit RONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ
IPB60R125CP
650 V 0.125 Ω
53 nC
PG-TO263
CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom
Type IPB60R125CP
Package PG-TO263
Ordering Code SP000088488
Marking 6R125P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
ID
I D,pulse E AS E AR I AR dv /dt
T C=25 °C T C=100 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V
V DS=0...480 V
Gate source
voltage
V GS static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value 25 16 82 708 1.2 11 50 ±20 ±30 208
-55 ... 150
Unit A
mJ
A V/ns V
W °C
Rev. 1.0 Rev. 1.1
page 1 Page 1
2007-02-06 2018-03-28
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2)
Symbol Conditions
IS I S,pulse
T C=25 °C
Reverse diode dv /dt 4)
dv /dt
IPB60R125CP
Value 16 82
15
Unit A
V/ns
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal char...
