CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ
IPI60R385CP
650 V 0.385 Ω
17 nC
PG-TO262
CoolMOS CP is specially designed for: • Hard switching SMPS topologies
Type IPI60R385CP
Package PG-TO262
Ordering Code Marking SP000103250 6R385P
Maximum rat.
IPI60R385CP
CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ
IPI60R385CP
650 V 0.385 Ω
17 nC
PG-TO262
CoolMOS CP is specially designed for: • Hard switching SMPS topologies
Type IPI60R385CP
Package PG-TO262
Ordering Code Marking SP000103250 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse E AS E AR I AR dv /dt V GS
T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V
V DS=0...480 V static
AC (f >1 Hz)
Power dissipation
P tot T C=25.