AlGaInP Red LED chip
Features:
(1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving...
AlGaInP Red LED chip
Features:
(1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving current applications
Characteristics:
(1) Size Chip Size: 8 mil x 8 mil (203±25 µm x 203±25 µm) Chip Thickness: 7 mil (180±25µm ) typical Bonding Pad: 6 mil (152±10 µm) in diameter
(2) Metallization: P electrode：Au pad N electrode：Au alloy
(3) Structure: Refer to drawing
Type:
708SRAP-R-AU-01
1.6 0.8
unit: mil
6 78
P-electrode AlGaInP epilayers
n-GaAs sub.
7
N-electrode
Electro-optical characteristics:
Parameter
Symbol Condition Min. Typ. Max. Unit
Forward
voltage
Vf1 If = 10uA 1.25 Vf2 If = 6.3mA ---
--2.0
--2.4
V V
Reverse
voltage
Vr
Ir =10uA
9
---
---
V
Dominant wavelength(1)
λ p If = 6.3mA 650
---
685 nm
Luminous intensity(2)(3)
Po A If=6.3mA 0.016
---
0.036 mW
(1) Basically, wavelength uniformity is λd±5nm; however, customers’ special requirements are also welcome.
(2) Customer’s special requirements are also welc...
