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70N10L Datasheet

Part Number 70N10L
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description SPI70N10L
Datasheet 70N10L Datasheet70N10L Datasheet (PDF)

www.DataSheet4U.com Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 16 70 P-TO220-3-1 V m A Type SPP70N10L SPB70N10L SPI70N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4175 Q67040-S4170 Q67060-S7428 Marking 70N10L 70N10L 70N10L Maximum Ratings,at Tj = 25 °C, unl.

  70N10L   70N10L






Part Number 70N10
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 70N10L Datasheet70N10 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N10 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 100 ±30 70 V V A ID(puls) Pulse Drain Current 280 A Ptot Total Dissipation@TC=25℃ 250 .

  70N10L   70N10L







SPI70N10L

www.DataSheet4U.com Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 16 70 P-TO220-3-1 V m A Type SPP70N10L SPB70N10L SPI70N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4175 Q67040-S4170 Q67060-S7428 Marking 70N10L 70N10L 70N10L Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 70 50 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 280 700 25 6 ±20 250 -55... +175 55/175/56 2001-08-24 kV/µs V W °C mJ Avalanche energy, single pulse ID =70 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =70A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 www.DataSheet4U.com Preliminary data SPI70N10L SPP70N10L,SPB70N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. max. 0.6 62.5 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-sou.


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