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70S1K4CE Datasheet
Part Number
70S1K4CE
Manufacturers
Infineon
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Description
MOSFET
Datasheet
70S1K4CE Datasheet (PDF)
IPD70R1K4CE,IPS70R1K4CE MOSFET 700VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhileno.
MOSFET
IPD70R1K4CE,IPS70R1K4CE MOSFET 700VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications Adapter,LCD&PDPTVandIndoorlighting DPAK tab 2 1 3 IPAKSL tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 750 V RDS(on),max 1400 mΩ Qg.typ 10.5 nC Id.typ 5.4 A ID,pulse 8.3 A Eoss@400V 1.15 µJ Type/OrderingCode IPD70R1K4CE IPS70R1K4CE Package PG-TO 252 PG-TO 251 Marking 70S1K4CE RelatedLinks see Appendix A Final Data Sheet 1 Rev.2.0,2016-02-16 700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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