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AP70T03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
Advanced Power Elect...
www.DataSheet4U.com
AP70T03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET D
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G S
BVDSS RDS(ON) ID
30V 9mΩ 60A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low
voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications.
GD S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 ±20 60 43 195 53 0.36 -55 to 175 -55 to 175
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200823053-1/4
www.DataSheet4U.com AP70T0G3H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-...