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74AHCT00 gate Datasheet PDF

Quad 2-input NAND gate

Quad 2-input NAND gate

 

 

 

Part Number 74AHCT00
Description Quad 2-input NAND gate
Feature INTEGRATED CIRCUITS DATA SHEET 74AHC00 ; 74AHCT00 Quad 2-input NAND gate Produ ct specification Supersedes data of 19 98 Dec 09 File under Integrated Circuit s, IC06 1999 Sep 23 Philips Semiconduc tors Product specification Quad 2-in put NAND gate FEATURES
• ESD protecti on: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CD M EIA/JESD22-C101 exceeds 1000 V
• Ba lanced propagation delays
• All input s have Schmitt-trigger actions
• Inpu ts accept voltages higher than VCC
• For AHC only: operates with CMOS input levels
• For AHCT only: operates with TTL input levels
• Specified .
Manufacture NXP
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Part Number 74AHCT00
Description QUADRUPLE 2-INPUT NAND GATES
Feature NEW PRODUCT 74AHCT00 QUADRUPLE 2-INPUT NAND GATES Description The 74AHCT00 pr ovides provides four independent 2-inpu t NAND gates with standard push-pull ou tputs.
The device is designed for opera tion with a power supply range of 4.
5V to 5.
5V.
The gates perform the Boolean function: Pin Assignments Y = A
• B or Y = A + B Features
• Wide Supply Voltage Range from 4.
5V to 5.
5V
• In puts Are TTL Voltage Level Compatible Outputs Sink or Source 8mA at VCC = 4.
5V
• CMOS Low Power Consumption
• Schmitt Trigger Action at All Inputs ESD Protection Exceeds JESD 22 ƒ 20 0-V Machine Model (A115-A) ƒ .
Manufacture Diodes
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Part Number 74AHCT00
Description Quad 2-input NAND gate
Feature 74AHC00; 74AHCT00 Quad 2-input NAND gate Rev.
5 — 26 May 2020 Product data s heet 1.
General description The 74AHC0 0; 74AHCT00 are quad 2-input NAND gates .
Inputs are overvoltage tolerant.
This feature allows the use of these device s as translators in mixed voltage envir onments.
2.
Features
• Wide supply voltage range from 2.
0 V to 5.
5 V
• I nput levels:
• For 74AHC00: CMOS leve l
• For 74AHCT00: TTL level
• Balan ced propagation delays
• All inputs h ave Schmitt-trigger actions
• Overvol tage tolerant inputs to 5.
5 V
• High noise immunity
• CMOS low power dissi pation
• ESD protection:
• HBM EIA .
Manufacture nexperia
Datasheet
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