74AUP1G38

74AUP1G38 Low-power 2-input NAND gate (open drain) Rev. 9 — 16 August 2022 Product data sheet 1. General description The 74AUP1G38 is a single 2-input NAND gate with open-drain output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. 2. Features and benefits Wide supply voltage range from 0.8 V to 3.6 V CMOS low power dissipation High noise immunity Complies with JEDEC standards: JESD8-12 (0.8 V to 1.3 V) JESD8-11 (0.9 V to 1.65 V) JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8C (2.7 V to 3.6 V) ESD protection: HBM JESD22-A114F Class 3A exceeds 5000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101E exceeds 1000 V Low static power consumption; ICC = 0.9 μA (maximum) Latch-up performance exceeds 100 mA per JESD 78 Class II Overvoltage tolerant inputs to 3.6 V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from -40 °C to +85 °C and -40 °C to +125 °C Nexperia 74AUP1G38 Low-power 2-input NAND gate (open drain) 3. Ordering information Table 1. Ordering info...