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74AUP1GU04

NXP Semiconductors

Low-power unbuffered inverter

74AUP1GU04 Low-power unbuffered inverter Rev. 01 — 10 August 2005 www.DataSheet4U.com Product data sheet 1. General d...


NXP Semiconductors

74AUP1GU04

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74AUP1GU04 Low-power unbuffered inverter Rev. 01 — 10 August 2005 www.DataSheet4U.com Product data sheet 1. General description The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible families. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. The 74AUP1GU04 provides the single unbuffered inverting gate. 2. Features s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.6 V s Multiple package options s Specified from −40 °C to +85 °C and −40 °C to +125 °C Philips Semiconductors 74AUP1GU04 www.DataSheet4U.com Low-power unbuffered inverter 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3 ns. Symbol Parameter Conditions CL = 5 pF; RL = 1 MΩ; VCC = 0.8 V CL = 5 pF; RL = 1 MΩ; VCC = 1.1 V to 1.3 V CL = 5 pF; RL = 1 MΩ; VCC = 1.4 V to 1.6 V CL = 5 pF; RL = 1 MΩ; VCC = 1.65 V to 1.95 V CL = 5 pF; RL = 1 MΩ; VCC = 2.3 V to 2.7 V CL = 5 pF; RL = 1 MΩ; VCC = 3.0 V to 3.6 V Ci CPD input capacitance power dissipation capacitance VCC = 1.8 V; f = 10 MHz VCC = 3.3 V; f = 10 MHz [1] [2] [1] [2] Min 0.9 0.7 0.5 0.4 0.3 - Typ 6.2 2...




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