Data Sheet
HUF75309T3ST
January 2004
3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET i...
Data Sheet
HUF75309T3ST
January 2004
3A, 55V, 0.070 Ohm, N-Channel UltraFET Power
MOSFET
This N-Channel power
MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low
voltage bus switches, and power management in portable and battery operated products.
Formerly developmental type TA75309.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75309T3ST SOT-223
75309
NOTE: HUF75309T3ST is available only in tape and reel.
Features
3A, 55V Ultra Low On-Resistance, rDS(ON) = 0.070Ω Diode Exhibits Both High Speed and Soft Recovery Temperature Compensating PSPICE® Model Thermal Impedance SPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
Packaging
SOT-223
GATE DRAIN SOURCE
DRAIN (FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are man...