75321S

Data Sheet HUF75321P3, HUF75321S3S December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321. Ordering Information PART NUMBER PACKAGE BRAND HUF75321P3 TO-220AB 75321P HUF75321S3S TO-263AB 75321S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE Features 35A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) Product reliability information can be foun...