75329G Datasheet
Part Number |
75329G |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
75329G Datasheet (PDF) |
HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
December 2001
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329G3
TO-247
75329G
HUF75329P3
TO-220AB
75329P
HUF75329S3S
TO-263AB
75329S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB va.
Part Number |
75329S |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
75329S Datasheet (PDF) |
HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
December 2001
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable .
Part Number |
75329P |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
75329P Datasheet (PDF) |
HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
December 2001
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable .
Part Number |
75329D |
Manufacturers |
ON Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
75329D Datasheet (PDF) |
Data Sheet
HUF75329D3S
October 2013
N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.
F.
Part Number |
75329D |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
75329D Datasheet (PDF) |
Data Sheet
HUF75329D3, HUF75329D3S
December 2001
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-o.
N-Channel MOSFET
HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
December 2001
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329G3
TO-247
75329G
HUF75329P3
TO-220AB
75329P
HUF75329S3S
TO-263AB
75329S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
Features
• 49A, 55V • Ultra Low On-Resistance, rDS(ON) = 0.024Ω • Temperature Compensating PSPICE® and SABER™
Models - Available on the web at: www.fairchildsemi.com • Thermal Impedance PSPICE and SABER Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
.
2021-11-23 : 75332P 75333G 75321D 75333S MMSZ5V6 MMSZ5V1 MMSZ4V7 MMSZ4V3 MMSZ3V9 MMSZ3V6