HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3
Data Sheet
December 2001
66A, 55V, 0.016 Ohm. N-Channel UltraFET Powe...
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3
Data Sheet
December 2001
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power
MOSFETs
These N-Channel power
MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low
voltage bus switches, and power management in portable and battery-operated products. .
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75333G3
TO-247
75333G
HUF75333P3
TO-220AB
75333P
HUF75333S3S
TO-263AB
75333S
HUF75333S3
TO-262AA
75333S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75333S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
Features
66A, 55V Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Formerly developmental type TA75333
Symbol
D
G
S
JEDEC TO-220AB
DR...