75339G

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 File Number 4363.5 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75339. Ordering Information PART NUMBER PACKAGE BRAND HUF75339G3 TO-247 75339G HUF75339P3 TO-220AB 75339P HUF75339S3S TO-263AB 75339S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75339S3ST. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE Features 75A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER© Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.Intersil.com/families/models.htm Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB DRAIN (FLANGE) ...