HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S
Data Sheet
March 2003
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power M...
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S
Data Sheet
March 2003
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power
MOSFETs
These N-Channel power
MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable and battery operated products.
Formerly developmental type TA75343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75343G3
TO-247
75343G
HUF75343P3
TO-220AB
75343P
HUF75343S3
TO-262AA
75343S
HUF75343S3S
TO-263AB
75343S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
Features
75A, 55V Simulation Models
- Temperature Compensating PSPICE® and SABER™ Models
- Thermal Impedance PSPICE™ and SABER Models Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DR...