Data Sheet
HUF75344G3, HUF75344P3
October 2013
N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ
These N-Channel power ...
Data Sheet
HUF75344G3, HUF75344P3
October 2013
N-Channel UltraFET Power
MOSFET 55 V, 75 A, 8 mΩ
These N-Channel power
MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable and batteryoperated products.
Formerly developmental type TA75344.
Ordering Information
PART NUMBER HUF75344G3 HUF75344P3
PACKAGE TO-247 TO-220AB
BRAND 75344G 75344P
Features
75A, 55V Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- Thermal Impedance PSPICE and SABER Models Available on the web at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE DRAIN GATE
DRAIN (TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.
All Fairchild s...