79LV0408
Low Voltage 4 Megabit
(512k x 8-bit) EEPROM
CE1
RES R/B WE OE A0-16
128Kx 8
CE2 128Kx 8
CE3 128Kx 8
CE4 128...
79LV0408
Low
Voltage 4 Megabit
(512k x 8-bit) EEPROM
CE1
RES R/B WE OE A0-16
128Kx 8
CE2 128Kx 8
CE3 128Kx 8
CE4 128Kx 8
Memory
Logic Diagram
I/O0-7
FEATURES
Four 128k x 8-bit EEPROMs MCM RAD-PAK® radiation-hardened against natural
space radiation Total dose hardness:
- > 100 krad (Si), depending upon space mission Excellent Single event effects @ 25°C - SEL > 120 MeV cm2/mg (Device) - SEU > 85 MeV cm2/mg(Memory Cells) - SEU > 18 MeV cm2/mg (Write Mode) - SET > 40 MeV cm2/mg (Read Mode) Package - 40 Pin RAD-PAK® Flat Pack - 40 Pin RAD-PAK® Rad Tolerant Flat Pack High speed: -200 and 250 ns access times available Data Polling and Ready/Busy signal Software data protection Write protection by RES pin High endurance - 10,000 erase/write (Page Mode), - 10 year data retention Page write mode: 1 to 128 byte page Low power dissipation - 88 mW/MHz active mode - 440 µW standby mode
DESCRIPTION
Maxwell Technologies’ 79LV0...
