7N10Z

UNISONIC TECHNOLOGIES CO., LTD 7N10Z 7A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N10Z is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters.  FEATURES * RDS(ON) < 0.35Ω @ VGS =10V, ID =3.5A * Fast Switching * Improved dv/dt Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N10ZL-TN3-R 7N10ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-762.B 7N10Z  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-762.B 7N10Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage Gate-Source Voltage VDSS VGSS 100 V ±20 V Continuous Drain Current TC =25°C ID 7A Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed Avalanche Energy (Note 3) Power Dissipation Derate above 25°C EAS PD 50 mJ 2.5 W 0.02 W/°C Operating Junction Temperature TJ -5...