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7N40 Datasheet

Part Number 7N40
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 7N40 Datasheet7N40 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N40 ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 400 ±30 7 V V A ID(puls) Pulse Drain Current 15 A Ptot Total Dissipation@TC=25℃ 100 W .

  7N40   7N40






Part Number 7N40
Manufacturers UTC
Logo UTC
Description N-CHANNEL POWER MOSFET
Datasheet 7N40 Datasheet7N40 Datasheet (PDF)

7N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 7A, 400V N-CHANNEL POWER MOSFET Power MOSFET „ DESCRIPTION The UTC 7N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N40 is universally applied in electronic lamp ballast b.

  7N40   7N40







N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N40 ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 400 ±30 7 V V A ID(puls) Pulse Drain Current 15 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 7N40 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VDS= VGS; ID=1mA IS=3.5A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=3.5A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time VGS=10V; ID=3.5A; VDD=200V; RL=.


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