7N60K-MTQ

UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 3.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60KL-TA3-T 7N60KG-TA3-T 7N60KL-TF3-T 7N60KG-TF3-T 7N60KL-TF1-T 7N60KG-TF1-T 7N60KL-TF2-T 7N60KG-TF2-T 7N60KL-TN3-R 7N60KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-025.f 7N60K-MTQ Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 7 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 7 A IDM 24.8 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 340 mJ 13 mJ Peak...