7N65(F,B,H)
7A mps,650 Volts N-CHANNEL MOSFET
FEATURE
7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A Low gate charge Low Cis...
7N65(F,B,H)
7A mps,650 Volts N-CHANNEL
MOSFET
FEATURE
7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 7N65
ITO-220AB 7N65F
TO-263 7N65B
TO-262 7N65H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
7N65 650 ±30 7 28 550 7 54 5.0 -55 to +150
260
10 1.1
UNIT
V
A
mJ A mJ V/ns ℃
℃
lbf·in N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case Maximum Power Dissipation
TC=25℃
Symbol
RthJC PD
ITO-220
1....
