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8050C Datasheet

Part Number 8050C
Manufacturers SEMTECH
Logo SEMTECH
Description NPN Transistor
Datasheet 8050C Datasheet8050C Datasheet (PDF)

ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST 8550 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Colle.

  8050C   8050C






Part Number 8050W
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet 8050C Datasheet8050W Datasheet (PDF)

8050W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features 8550W 。 Complementary pair with 8550W.  / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 3 21 PIN1:Emitter PIN 2:Base PIN 3:Collector / Marking hFE Classifications Symbol hFE Range Marking B 85~160 HY1B C 120~200 HY1C D 160~300 HY1D http://www.fsbrec.com 1/6 8050W Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) .

  8050C   8050C







Part Number 8050T
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet 8050C Datasheet8050T Datasheet (PDF)

8050T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features 8550T 。 Complementary pair with 8550T. / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1:Base PIN 2:Collector / Marking hFE Classifications Symbol hFE Range Marking B 85~160 HY1B PIN 3:Emitter C 120~200 HY1C D 160~300 HY1D ** ** ** http://www.fsbrec.com 1/6 8050T Rev.E Mar.-2016 / Absolute Maximum Rating.

  8050C   8050C







Part Number 8050SST
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet 8050C Datasheet8050SST Datasheet (PDF)

Elektronische Bauelemente 8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Switching and Amplification. CLASSIFICATION OF hFE (1) Product-Rank 8050SST-B 8050SST-C Range 85~160 120~200 8050SST-D 160~300 TO-92 GH J AD B K E CF Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - .

  8050C   8050C







Part Number 8050SLT1
Manufacturers WILLAS
Logo WILLAS
Description NPN Transistor
Datasheet 8050C Datasheet8050SLT1 Datasheet (PDF)

EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ PRIMARY CHARACTERISTICS PC 300mW VCEO 25V IC 500mA hFE 200~350 TJ,Max 150℃ FEATURES  Collector Current: IC=0.5A  Moisture Sensitivity Level 1 ϴϬϱϬ^>dϭ SOT-23 PACKAGE Marking Code : J3Y Ex : 8050SLT1 J3Y COLLECTOR 3 1 BASE 2 EMITTER MECHANICAL DATA  Case:Molded plastic,SOT-23  Polarity:Shown above  Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026  Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS (Ta=25℃ unless othe.

  8050C   8050C







Part Number 8050SD
Manufacturers Sanken electric
Logo Sanken electric
Description SI-08050SD
Datasheet 8050C Datasheet8050SD Datasheet (PDF)

1-1-2 Switching Mode Regulator ICs SI-8000SD Series ■Features • Surface-mount package (TO263-5) • Output current: 3.0A Surface Mount, Separate Excitation Step-down Switching Mode Regulator ICs ■Lineup Part Number VO (V) IO (A) SI-8033SD 3.3 3 SI-8050SD 5.0 • High efficiency: 79% typ. (SI-8033SD), 84% typ. (SI-8050SD) • Requires only 4 discrete external components • Internally-adjusted phase correction and output voltage • Built-in reference oscillator (60kHz) • Built-in overcurrent and therma.

  8050C   8050C







NPN Transistor

ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST 8550 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 25 40 6 1 1.5 100 1 150 -55 to +150 Unit V V V A A mA W OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 8050 (1.5A) Characteristics at Tamb=25 OC DC Current Gain at VCE=1V, IC=5mA at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VBE=6V Collector Saturation Voltage at IC=800mA, IB=80mA Base Saturation Voltage at IC=800mA, IB=80mA Collector Emitter Breakdown Voltage at IC=2mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=100µA Base Emitter Voltage at IC=10mA, VCE=1V Gain Bandwidth Product at VCE=10V, IC=50mA Collector Base Capacitance at VCB=10V, f=1MHz Symbol 8050C 8050D hFE .


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