DatasheetsPDF.com

80N03

GFD

MOSFET

DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . I...


GFD

80N03

File Download Download 80N03 Datasheet


Description
DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 80N03 VDS 30V RDS(ON) -- ID 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 80N03 TO-252-2L OGFD www.goford.cn TEL:0755-86350980 FAX:0755-86350963 80N03 Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Symbol Parameter 80N03 Units VDS ID IDM PD VGS EAS TJ and TSTG Drain-to-Source Voltage Continuous Drain Current Drain Current...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)