80N03L

SPP80N03L SIPMOS® Power Transistor Features N channel Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω Avalanche rated Logic Level dv/dt rated 175°C operating temperature Type SPP80N03L SPB80N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4735-A2 Tube P-TO263-3-2 Q67040-S4735-A3 Tape and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A ID TC = 25 °C, TC = 100 °C 1) Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 300 -55... +175 55/175/56 V W °C TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group Free Datasheet http://www.datasheet4u.net/ SPP80N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 0.5 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteris...