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80N60B Datasheet

Part Number 80N60B
Manufacturers IXYS
Logo IXYS
Description High Current IGBT
Datasheet 80N60B Datasheet80N60B Datasheet (PDF)

High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 600 V 600 V ±20 V ±30 V T C = 25°C TC = 90°C T C = 90°C TC = 25°C, 1 ms (silicon chip capability) (silicon chip capabil.

  80N60B   80N60B






Part Number 80N60A
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description IGBT
Datasheet 80N60B Datasheet80N60A Datasheet (PDF)

Preliminary data HiPerFASTTM IGBT www.datasheet4u.com IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125 °C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 25°C Maximum Ratings TO-264 AA 600 600 ±20 ±30 80 80 200 ICM = 100 @.

  80N60B   80N60B







Part Number 80N60
Manufacturers Cmos
Logo Cmos
Description N-Channel MOSFET
Datasheet 80N60B Datasheet80N60 Datasheet (PDF)

CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Features Simple Drive Requirement Fast Switching Low On-Resistance G D BVDSS 60V Applications Motor Control DC-DC converters RDSON 7.8m ID 80A General Purpose Power Amplifier TO220/263/262 Pin Configuration G S D S T.

  80N60B   80N60B







High Current IGBT

High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 600 V 600 V ±20 V ±30 V T C = 25°C TC = 90°C T C = 90°C TC = 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C R G = 5 Ω, non-repetitive TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 160 80 75 300 ICM = 160 @ 0.8 V CES 10 A A A A A µs 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 0.4/6 Nm/lb.in. PLUS 247 TO-264 6g 10 g PLUS 247TM (IXSX) G C E TO-264 AA (IXSK) (TAB) G C E (TAB) G = Gate C = Collector E = Emitter TAB = Collector Features ! International standard packages ! Very high current, fast switching IGBT ! Low V CE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Test Conditions IC = 500 µA, VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES V =0V GE VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 V 4 8V TJ = 25°C T J = 125°C 200 µA 2 mA ±200 nA 2.5 V Applications ! AC motor speed control ! DC ser.


2015-12-27 : PSD813F1V    PSD813F1    JRC2267    PSD813F1A    PSD813F2V    PSD813F1-A    80N60B    HV9967B    IL3367D    IZ3367   


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