80NF03L-04

STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) STB80NF03L-04/-1 STP80NF03L-04 30 V <0.004 Ω 30 V <0.004 Ω s TYPICAL RDS(on) = 0.0035Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW THRESHOLD DRIVE ID 80 A 80 A DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 1 D2PAK TO-263 123 I2PAK TO-262 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB80NF03L-04 STB80NF03L-04T4 STP80NF03L-04 STB80NF03L-04-1 MARKING 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID(**) Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C IDM() Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Storage T...