80NT3

Naina Semiconductor emiconductor Ltd. Non-isolated Thyristor Module Features Low voltage three-phase High surge current of 2500A @ 60Hz Easy construction Non-isolated Mounting base as common anode 80NT3 Voltage Ratings (TC = 25OC unless otherwise specified) Parameter Maximum repetitive peak reverse voltage Maximum non-repetitive peak reverse voltage Maximum repetitive peak off-state voltage Symbol VRRM VRSM VDRM Values 300 360 300 Units V V V NT3 Electrical Characteristics (TC = 25OC unless otherwise specified) Parameter Average on-state current R.M.S. on-state current On-state surge current I t required for fusing Peak gate power dissipation Average gate power dissipation Peak gate current Peak gate voltage (forward) Peak gate voltage (reverse) Critical rate of rise of on-state current Critical rate of rise of off-state voltage Holding current I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1 A/µs 0 2/3 TJ = 150 C, V0 = VDRM , exponential wave 2 Conditions Single phase, half half-wave, 180 0 conduction @ TC = 116 C 0 http://www.DataSheet4U.net/ Symbol IT(AV) IT(RMS) ITSM It PGM PGM(AV) IGM VFGM VRGM di/dt dv/dt IH 2 Values 80 125 2280 26000 10 1 3 10 5 50 50 100 Units A A A AS W W A V V A/µs V/µs mA 2 half cycle, 50Hz/60Hz, peak value, non-repetitive repetitive Thermal & Mechanical Specifications (TC = 25OC unless otherwise specified) Parameter Operating junction temperature range Storage temperature range Thermal resistance, junction to case Symbol TJ TSTG Rth(JC...