IPU80R4K5P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V su...
IPU80R4K5P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation.
Features
Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss Best-in-classDPAKRDS(on) Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio
Benefits
Best-in-classperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar.
Pleasenote:For
MOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended.
IPAK
tab
12 3
Drain Pin 2, Tab Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
4.5
Ω
Qg,typ
4
nC
ID
1.5
A
Eoss @ 500V
0.4
µJ
VGS(th),...