8205A

8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . FEATURES l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A) l Lead free product is acquired l Surface Mount Package APPLICATION l Battery protection l Load switch l Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking 8205A Device 8250A Device Package TSSOP8 Reel size Tape width 8mm Quantity 3000 units Φ180mm PIN DESCRIPTION Datasheet 2012-2-27 Page 1 of 6 8205A PIN NUM 1 2 3 4 5 6 7 8 PIN NAME D S1 S1 G1 G2 S2 S2 D PIN FUNCTION DRAIN SOURCE1 SOURCE1 GATE2 GATE2 SOURCE2 SOURCE2 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25℃) Symbol VDS ID IDM VGS PD Tstg Parameter Drain-source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-source Voltage Power Dissipation (TC = 25°C) Operating and Storage Temperature Rang Value 20 (Note1) (Note2) (Note1) 6 24 ±12 1.25 -55 to +150 Unit V A A V W ℃ Notes a. PW<10us,Duty Cycle<1%,VGS=4.5V 2 b. Mounted on ceramic substrate of 45 cm x 2.2mm. Caution: These values must not be exceeded under any conditions. Remark: The diode connected between the gate and source of the tran...