83AC12

SKiiP 83 AC 12 - SKiiP 83 AC 12 I www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1) Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 80 / 53 160 / 106 720 2600 Units V V A A °C °C V A A A A2 s Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AC 12 SKiiP 83 AC 12 I 3) SKiiP 83 AC 12 IS 4) IGBT 3-phase bridge inverter Case M8 Inverse Diode IF = –IC Theatsink = 25 / 80 °C IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C tp = 10 ms; sin., Tj = 25 °C IFSM tp = 10 ms; sin., Tj = 25 °C I2t Characteristics Symbol Conditions 1) IGBT - Inverter IC = 100 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 100 A; Tj = 125 °C tr Rgon = Rgoff = 11 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter VF = VEC IF = 75 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C rT IF = 75 A, VR = – 600 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 50 ns 110 55 ns 600 400 ns 100 70 mJ – 27 nF – 6,6 K/W 0,25 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ ~ UL recognized file no. E63532 more detailed characteristics of current sensors and temperature sensor please refer to part A common characteristics see page B 16 – 4 Current sensor for three pha...