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8550 Datasheet

Part Number 8550
Manufacturers Stanson Technology
Logo Stanson Technology
Description PNP TRANSISTOR
Datasheet 8550 Datasheet8550 Datasheet (PDF)

PNP TRANSISTOR -1.5A 8550 Power Dissipation: 1.0W Collector Current: -1.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo V Ic=-0.1mA -25 Collector-Base Breakdown Voltage BVcbo -45 V Ic=-100uA Emitter-Base Breakdown Voltage BVebo V -5 Ie=-100£g A Collector-Base Leakage Icbo -0.1 uA Vcb=-40V Collector-Emitter Leakage Iceo -0.1 uA Vce=-20V Emitter-Base Leakage Ie.

  8550   8550






Part Number 8550
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet 8550 Datasheet8550 Datasheet (PDF)

8550 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features PC,IC , 8050 。 High PC and IC, complementary pair with 8050. / Applications 2W 。 2W output amplifier of portable radios in class B push-pull operation. / Equivalent Circuit / Pinning 1 23 PIN1:Collector PIN 2:Base PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 85~160 C 120~200 D 160~300 http://www.fsbrec.com 1/6.

  8550   8550







Part Number 8550
Manufacturers Micro Electronics
Logo Micro Electronics
Description GENERAL DESCRIPTION
Datasheet 8550 Datasheet8550 Datasheet (PDF)

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  8550   8550







PNP TRANSISTOR

PNP TRANSISTOR -1.5A 8550 Power Dissipation: 1.0W Collector Current: -1.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo V Ic=-0.1mA -25 Collector-Base Breakdown Voltage BVcbo -45 V Ic=-100uA Emitter-Base Breakdown Voltage BVebo V -5 Ie=-100£g A Collector-Base Leakage Icbo -0.1 uA Vcb=-40V Collector-Emitter Leakage Iceo -0.1 uA Vce=-20V Emitter-Base Leakage Iebo -0.1 uA Veb=-5V www.DataSheet4U.com Collector-Emitter Saturation Voltage Vce(sat) -0.6 V Ic=-1500mA, Ib=-50mA Base-Emiiter Saturation Voltage Vbe(sat) -1.2 V Ic=-1500mA, Ib=-50mA DC Current Gain Hfe1 85 Vce=-1V,Ic=-50mA 300 Hfe2 50 Vce=-1V,Ic=-500mA Collector Current Ic -0.5 A Peak Collector Current Icp -8 A(Pulse) Current Gain Bandwidth fT MHz Vcb=-6V, Ic=-20mA 150 Output Capacitance Cob 32 pF Vcb=-20V,Ie=0,f=1MHz Power Dissipation Pc 1.0 W Junction Temperature Tj 150 ¢J Storage Temperature Tstg -55 150 ¢J Hfe1 Classification Rank Range B 85-160 C 120-200 D 160-300 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 .


2007-06-21 : K1794    2SK1794    8550    EXB-V8V103J    EXB-xxxx    EXBxxxx    EXB1    EXB2    EXB3    EXBN   


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