INCHANGE Semiconductor
www.DataSheet4U.com isc N-Channel Mosfet Transistor
isc Product Specification
8N60
·FEATURES ·...
INCHANGE Semiconductor
www.DataSheet4U.com isc N-Channel
Mosfet Transistor
isc Product Specification
8N60
·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source
Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source
Voltage Gate-Source
Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 7.5 30 147 150 -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.85 62.5 UNIT ℃/W ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com isc N-Channel
Mosfet Transistor
isc Product Specification
8N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V(BR)DSS
Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.25mA
600
V
VGS(th) RDS(on) IGSS
Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
2
4
V Ω
Drain-Source On-Resistance
VGS= 10V; ID= 3.75A VGS= ±20V; VDS= 0
1.2 ±100
Gate-Body Leakage Current
nA μA
IDSS
Zero Gate
Voltage Drain Current
VDS= 600V; VGS= 0
1
VSD
Forward On-
Voltage
IS= 7.5A; VGS= 0
1.4
V
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isc Website...