UNISONIC TECHNOLOGIES CO., LTD 8NM60-U2
8A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 8NM60-U2 is a Sup...
UNISONIC TECHNOLOGIES CO., LTD 8NM60-U2
8A, 600V N-CHANNEL SUPER-JUNCTION
MOSFET
DESCRIPTION
The UTC 8NM60-U2 is a Super Junction
MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power
MOSFET is usually used at DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.8Ω @ VGS=10V, ID=4.0A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested
SYMBOL
Power
MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8NM60L-TA3-T
8NM60G-TA3-T
8NM60L-TF3-T
8NM60G-TF3-T
8NM60L-TF1-T
8NM60G-TF1-T
8NM60L-TW1-T
8NM60G-TW1-T
8NM60L-TM3-T
8NM60G-TM3-T
8NM60L-TMS2-T
8NM60G-TMS2-T
8NM60L-TN3-R
8NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220WF TO-251 TO-251S2 TO-252
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS
Packing
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www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-276.F
8NM60-U2
MARKING
Power
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-276.F
8NM60-U2
Power
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source
Voltage
VDSS
600
V
Gate-Source
Voltage Continuous Drain Current
Continuous
VGSS ID
±30 8.0
V A
Pulsed Drain Current
Pulsed (Note...