900N20N Datasheet





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900N20N Datasheet - Power Transistor

900N20N   900N20N  

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Type OptiMOSTM3 Power-Transistor Feature s • Optimized for dc-dc conversion N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) • 150 C operating temperature • Pb-free le ad plating; RoHS compliant • Qualifie d according to JEDEC1) for target appli cation • Halogen-free according to IE C61249-2-21 BSZ900N20NS3 G Product Su mmary VDS RDS(on),max ID 200 V 90 mW 1 5.2 A PG-TSDSON-8 Type BSZ900N20NS3 G Package Marking PG-TSDSON-8 900N20N Maximum ratings, at T j=25 °C, unles s otherwise specified Parameter Symbo l Conditions Continuous drain current Pulsed drain current2) Avalanche energy , single pulse Reverse diode dv /dt ID I D,pulse E AS

Manufacture Part Number Description

Infineon

900N20N

Power Transistor




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