Naina Semiconductor emiconductor Ltd.
Three – Phase Bridge Rectifier
Features
• • • Easy connections Excellent power vol...
Naina Semiconductor emiconductor Ltd.
Three – Phase Bridge Rectifier
Features
Easy connections Excellent power volume ratio Insulated type
90MDS
Voltage Ratings (TJ = 250C unless otherwise noted) VRRM, Max. repetitive peak reverse
voltage (V)
800 1000 1200 1400 1600
Type number
Voltage code
VRSM, Max. nonrepetitive peak reverse
voltage (V)
900 1100 1300 1500 1700
IRRM max @ TJ max (mA)
MDS
80 90MDS 100 120 140 160
10
Thermal and Mechanical Specifications (TA = 250C unless otherwise noted) Parameters
Maximum operating junction temperature range Maximum storage temperature range DC operation per module Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque ±10% Approximate weight DC operation per junction 120 Rect conduction angle per module 120 Rect conduction angle per junction Per module, Mounting surface smooth, flat and greased to heatsink to terminal Rth(CS) T
Symbol
TJ TStg
Values
- 40 to + 150 - 40 to + 150 0.21 1.26 0.25 1.47 0.03 4 to 6 3 to 4 176
Units
0 0
C C
Rth(JC)
0
C/W
0
C/W Nm g
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120
[email protected] www.nainasemi.com
Naina Semiconductor emiconductor Ltd.
Electrical Specifications (TJ = 250C unless otherwise noted) Parameters
Maximum DC output current Maximum peak one-cycle forward, non-repetitive surge current
90MDS
Conditions
120 Rect conduction angle angle, TC = 85 C t = 10ms t = 8.3ms t...