STH90N55F4-2
N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET
Features
Type
VDSS RDS(on) max
ID
STH90N55F4-2 55 V
< 0.008 Ω
t(s)■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
uc■ 100% avalanche tested
90 A
rodApplications te P■ Switching applications
oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t.
N-channel Power MOSFET
STH90N55F4-2
N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET
Features
Type
VDSS RDS(on) max
ID
STH90N55F4-2 55 V
< 0.008 Ω
t(s)■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
uc■ 100% avalanche tested
90 A
rodApplications te P■ Switching applications
oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance.
2 3 3 1
H²PAK
Figure 1. Internal schematic diagram
$
'
Obsolete Pro 3
!-V
Table 1. Device summary Order code
Marking
Packages
Packaging
STH90N55F4-2
90N55F4
H²PAK
Tape and reel
August 2011
Doc ID 15608 Rev 4
1/16
www.st.com
16
Contents
Contents
STH90N55F4-2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical cha.