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9435 Datasheet

Part Number 9435
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description P-Channel MOSFET
Datasheet 9435 Datasheet9435 Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-5.3A, RDS(ON) = 60mΩ(typ.) @ VGS = -10V RDS(ON) = 90mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD P-Channel MOSFET Absolute Maximum Ratings (T A = 25°C unless otherwise .

  9435   9435






Part Number 9435
Manufacturers GOFORD
Logo GOFORD
Description P-Channel MOSFET
Datasheet 9435 Datasheet9435 Datasheet (PDF)

GOFORD 9435 DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 73mΩ 48mΩ -5.1 A ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management D G .

  9435   9435







P-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-5.3A, RDS(ON) = 60mΩ(typ.) @ VGS = -10V RDS(ON) = 90mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD P-Channel MOSFET Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Current – Pulsed Rating -30 ±20 -4.6 -20 Unit V A TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol PD TJ)TSTG RθJA Parameter Maximum Power Dissipation TA = 25°C TA = 100°C Maximum Operating and Storage Junction Temperature Thermal Resistance - Junction to Ambient Rating 2.5 1.0 -55 to 150 50 Unit W °C °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V VGS(th) Gate Threshold Voltage VDS=.


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