SSM9435GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
DESCRIPTION
The SSM9435GM acheives ...
SSM9435GM
P-channel Enhancement-mode Power
MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
DESCRIPTION
The SSM9435GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low
voltage applications such as battery management and general high-side switch circuits. The SSM9435GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications.
-30V 50mΩ -5.3A
Pb-free; RoHS-compliant SO-8
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D D D D G
SO-8
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM PD Parameter Drain-source
voltage Gate-source
voltage Continuous drain current, TC = 25°C TC = 70°C Pulsed drain current
1
Value -30 ±20 -5.3 -4.7 -20 2.5 0.02
Units V V A A A W W/°C
Total power dissipation, TC = 25°C Linear derating factor
TSTG TJ
Storage temperature range Operating junction temperature range
-55 to 150 -55 to 150
°C °C
THERMAL CHARACTERISTICS
Symbol RΘ JA Parameter
Maximum thermal resistance, junction-ambient
3
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
2/12/2006 Rev.3.01
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SSM9435GM
ELECTRICAL CHARACTERISTICS
Symbol BVDSS Parameter Drain-source breakdown
voltage
Breakdown
voltage temper...