97SD3232 Datasheet | Maxwell Technologies





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97SD3232 Datasheet PDF

Part Number 97SD3232
Description 1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
Manufacture Maxwell Technologies
Total Page 30 Pages
PDF Download Download 97SD3232 Datasheet

Features: Datasheet pdf 97SD3232 1 Gb SDRAM 8-Meg X 32 Bit X 4-B anks www.DataSheet4U.com Logic Diagram (One Amplifier) Memory FEATURES: • 1 Gigabit ( 8-Meg X 32-Bit X 4-Banks) • RAD-PAK® radiation-hardened agains t natural space radiation • Total Dos e Hardness: >100 krad (Si), depending u pon space mission • Excellent Single Event Effects: SELTH > 85 MeV/mg/cm2 @ 25°C • JEDEC Standard 3.3V Power Sup ply • Clock Frequency: 100 MHz Operat ion • Operating tremperature: -55 to +125 °C • Auto Refresh • Single pu lsed RAS • 2 Burst Sequence variation s Sequential (BL =1/2/4/8) Interleave ( BL = 1/2/4/8) • Programmable CAS late ncy: 2/3 • Power Down and Clock Suspe nd Modes • LVTTL Compatible Inputs an d Outputs • Package: 132 Lead Quad St ack Pack Flat Package DESCRIPTION: Max well Technologies’ Synchronous Dynami c Random Access Memory (SDRAM) is ideal ly suited for space applications requir ing high performance computing and high density memory storage. As microprocessors increase in speed and demand for higher density memo.

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97SD3232 Datasheet
97SD3232
1 Gb SDRAMwww.DataSheet4U.com
8-Meg X 32 Bit X 4-Banks
Logic Diagram (One Amplifier)
FEATURES:
• 1 Gigabit ( 8-Meg X 32-Bit X 4-Banks)
• RAD-PAK® radiation-hardened against natural space
radiation
• Total Dose Hardness:
>100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
SELTH > 85 MeV/mg/cm2 @ 25°C
• JEDEC Standard 3.3V Power Supply
• Clock Frequency: 100 MHz Operation
• Operating tremperature: -55 to +125 °C
• Auto Refresh
• Single pulsed RAS
• 2 Burst Sequence variations
Sequential (BL =1/2/4/8)
Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Power Down and Clock Suspend Modes
• LVTTL Compatible Inputs and Outputs
• Package: 132 Lead Quad Stack Pack Flat Package
DESCRIPTION:
Maxwell Technologies’ Synchronous Dynamic Random
Access Memory (SDRAM) is ideally suited for space
applications requiring high performance computing and
high density memory storage. As microprocessors
increase in speed and demand for higher density mem-
ory escalates, SDRAM has proven to be the ultimate
solution by providing bit-counts up to 1 Gigabits and
speeds up to 100 Megahertz. SDRAMs represent a sig-
nificant advantage in memory technology over traditional
DRAMs including the ability to burst data synchronously
at high rates with automatic column-address generation,
the ability to interleave between banks masking pre-
charge time
Maxwell Technologies’ patented RAD-PAK® packaging
technology incorporates radiation shielding in the micro-
circuit package. It eliminates the need for box shielding
for a lifetime in orbit or space mission. In a typical GEO
orbit, RAD-PAK® provides greater than 100 krads(Si)
radiation dose tolerance. This product is available with
screening up to Maxwell Technologies self-defined Class
K.
01.11.05 Rev 2
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice 1
©2005 Maxwell Technologies
All rights reserved.

97SD3232 Datasheet
1 Gb (8-Meg X 32-Bit X 4-Banks) SDRAM
Pinout Description
97SD3232
www.DataSheet4U.com
The 97SD3232 Consists of 4, 8-Meg X 8-Bit X 4-Banks, die.
The 132 Pin 2-layer stack package contains two die per layer. CLK1
clocks die 1 and 3, while CLK2 clocks die 2 and 4.
CKE 1-4, CS 1-4 and DQM 1-4 correspond to one of the die:
CKE1, CS1 and DQM1 control D0 - D7
CKE2, CS2 and DQM2 control D8 - D15
CKE3, CS3 and DQM3 control D16 - D23
CKE4, CS4 and DQM4 control D24 - D31
01.11.05 Rev 2
All data sheets are subject to change without notice 2
©2005 Maxwell Technologies
All rights reserved.




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