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AP9915H/J
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Low on-resist...
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AP9915H/J
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D
BVDSS RDS(ON) ID
20V 50mΩ 20A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 20 ± 12 20 16 41 26 0.2 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
200218032
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AP9915H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50
Max. Units 50 80 1.2 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown
Voltage Temperature Coefficient...