9926A

FDW9926A July 2008 FDW9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Applications Battery protection Load switch Power management Features 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V Optimized for use in battery circuit applications Extended VGSS range (±10V) for battery applications High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Total Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size 9926A FDW9926A 13’’ ©2008 Fairchild Semiconductor Corporation 1 2 3 4 Ratings 20 ±12 4.5 30 1.0 0.6 –55 to +150 125 208 Tape width 12mm 8 7 6 5 Units V V A W °C °C/W Quantity 2500 units FDW9926A Rev E1(W) FDW9926A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditi...