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9926B Datasheet

Part Number 9926B
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description Dual N-Channel MOSFET
Datasheet 9926B Datasheet9926B Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6.5 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings P.

  9926B   9926B






Part Number 9926A
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description Dual N-Channel MOSFET
Datasheet 9926B Datasheet9926A Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926A Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter.

  9926B   9926B







Part Number 9926A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description FDW9926A
Datasheet 9926B Datasheet9926A Datasheet (PDF)

FDW9926A July 2008 FDW9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Applications • Battery protection • Load switch • Power management Features • 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V • Optimized.

  9926B   9926B







Dual N-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6.5 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 10 sec Steady State Steady State * Surface Mounted on 1" X 1"FR4 Board. Symbol RthJA RthJF Typ 50 80 30 Max Unit 62.5 100 /W 40 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET 9926B Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Testconditons VDSS VGS = 0 V, ID = 250 A IDSS VDS =16V , VGS = 0V Min Typ Max Unit 20 V 1 uA Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance * On-State Drain Current * Forward Transconductance * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage * * Pulse test; pulse width 300 s, duty cycle IGSS VDS = 0V , VGS = 10V VGS(th) VDS = VGS , ID = 250uA VGS = 4.5V , ID = 6.5A rDS(on) VGS = 2.5V , ID = 5.5A ID(on) VDS 5V , VGS = .


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