9962GH Datasheet


Part Number

9962GH

Description

AP9962GH

Manufacture

Advanced Power Electronics

Total Page 4 Pages
PDF Download
Download 9962GH Datasheet


Features Datasheet pdf AP9962GH/J RoHS-compliant Product Advan ced Power Electronics Corp. ▼ Low On- resistance ▼ Single Drive Requirement ▼ Surface Mount Package G S D N-CHA NNEL ENHANCEMENT MODE POWER MOSFET BVD SS RDS(ON) ID 40V 20mΩ 32A Descripti on Advanced Power MOSFETs from APEC pro vide the designer with the best combina tion of fast switching, ruggedized devi ce design, low on-resistance and costef fectiveness. The TO-252 package is wide ly preferred for all commercial-industr ial surface mount applications and suit ed for low voltage applications such as DC/DC converters. The through-hole ver sion (AP9962GJ) are available for low-p rofile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ra tings Symbol VDS VGS ID@TC=25℃ ID@TC= 100℃ IDM PD@TC=25℃ TSTG TJ Paramete r Drain-Source Voltage Gate-Source Volt age Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pu lsed Drain Current 1 Rating 40 +20 32 20 150 27.8 0.22 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Po.
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9962GH Datasheet
Advanced Power
Electronics Corp.
AP9962GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
G
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9962GJ) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
40V
20mΩ
32A
GD
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
32
20
150
27.8
0.22
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
62.5
110
Unit
/W
/W
/W
Data and specifications subject to change without notice
1
200907164
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