isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
9N40
·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source V...
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
9N40
·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage (VGS=0)
400
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
9
A
ID(puls)
Pulse Drain Current
36
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.67 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
INCHANGE Semiconductor
9N40
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-
Voltage
IS=8.5A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=4.5A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 400V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10...