9N65

9N65 UNISONIC TECHNOLOGIES CO., LTD Preliminary 9A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 9N65 is generally applied in high efficiency switch mode power supplies and uninterruptible power supplies. „ FEATURES * RDS(ON)=1.1Ω @ VGSS=10V * High Switching Speed * Improved dv/dt Capability * 100% Avalanche Tested „ SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source „ ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N65L-TA3-T 9N65G-TA3-T 9N65L-TF3-T 9N65G-TF3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 123 GDS GDS Packing Tube Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-618.d 9N65 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 V ±30 V Drain Current Continuous, @TC=25°C VGSS@10V @TC=100°C Pulsed (Note 2) ID IDM 9A 5.4 A 36 A Avalanche Current (Note 2) IAR 5.2 A Avalanche Energy Single Pulsed (Note 2) Repetitive (Note 3) EAR EAS 16 mJ 375 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 2.8 V/ns Power Dissip...