9N80

UNISONIC TECHNOLOGIES CO., LTD 9N80 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 9N80 is universally applied in high efficiency switch mode power supply. „ FEATURES * RDS(on) = 1.3Ω @VGS = 10 V * Improved Gate Charge * Lower Input Capacitance * Lower Leakage Current: 25μA (Max.) @ VDS = 800V „ SYMBOL 1 1 Power MOSFET TO-220 TO-220F1 TO-220F2 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N80L-TA3-T 9N80G-TA3-T 9N80L-TF1-T 9N80G-TF1-T 9N80L-TF2-T 9N80G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-493.G 9N80 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 800 V VGSS ±30 V Avalanche Current (Note 2) IAR 9 A Drain Current (Continuous) Continuous Pulsed (Note 2) ID IDM 9A 36 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) EAS EAR dv/dt 900 mJ 24 mJ 2.0 V/ns TO-2...