9N90 Datasheet | Unisonic Technologies





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9N90 Datasheet PDF

Part Number 9N90
Description 900 Volts N-CHANNEL POWER MOSFET
Manufacture Unisonic Technologies
Total Page 6 Pages
PDF Download Download 9N90 Datasheet

Features: Datasheet pdf UNISONIC TECHNOLOGIES CO., LTD 9N90 900V N-CHANNEL MOSFET „ DESCRIPTION 1 Pow er MOSFET The UTC 9N90 uses UTC’s ad vanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON ), low gate charge and operation with l ow gate voltages. This device is suitab le for use as a load switch or in PWM a pplications. TO-247 „ FEATURES * R DS(ON) = 1.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Re verse Transfer Capacitance ( CRSS = Typ ical 14 pF ) * Fast Switching Capabilit y * Avalanche Energy Specified * Improv ed dv/dt Capability, High Ruggedness 1 TO-3P „ SYMBOL 2.Drain 1 1.Gate TO-220F1 3.Source „ ORDERING INFORM ATION Ordering Number Lead Free Halogen Free 9N90L-T47-T 9N90G-T47-T 9N90L-T3P -T 9N90G-T3P-T 9N90L-TF1-T 9N90G-TF1-T Package TO-247 TO-3P TO-220F1 Pin Assig nment 1 2 3 G D S G D S G D S Packing T ube Tube Tube www.DataSheet4U.com www .unisonic.com.tw Copyright © 2010 Unis onic Technologies Co., LTD 1 of 6 QW-R502-217.E 9N90 „ ABSOLUTE MAXIMU.

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9N90 Datasheet
UNISONIC TECHNOLOGIES CO., LTD
9N90
900V N-CHANNEL MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 9N90 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
„ FEATURES
* RDS(ON) = 1.4@VGS = 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
2.Drain
1
1
TO-247
TO-3P
1.Gate
3.Source
1
TO-220F1
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90L-TF1-T
9N90G-TF1-T
Package
TO-247
TO-3P
TO-220F1
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., LTD
1 of 6
QW-R502-217.E

9N90 Datasheet
9N90
Power MOSFET
„ ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TC = 25°C)
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed(Note 3)
Repetitive(Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
900 V
±30 V
9.0 A
36 A
9.0 A
900 mJ
28 mJ
4.0 V/ns
TO-247
160 W
Power Dissipation
Linear Derating Factor
above TC = 25°C
TO-3P
TO-220F1
TO-247
TO-3P
TO-220F1
PD
240
36
1.28
2.22
0.288
W
W/°C
W/°C
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD9.0A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction-to-Case
TO-247
TO-3P
TO-220F1
TO-247
TO-3P
TO-220F1
SYMBOL
θJA
θJC
RATINGS
50
40
62.5
0.78
0.52
3.47
UNIT
°C/W
°C/W
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250μA
Drain-Source Leakage Current
IDSS VDS = 900 V, VGS = 0 V
Gate-Body Leakage Current Forward
Reverse
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
BVDSS/TJ ID = 250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
www.DatSatSahtieceDt4rUai.nc-oSmource On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 4.5 A
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
MIN TYP MAX UNIT
900 V
10 μA
100 nA
-100 nA
0.99 V/°C
3.0 5.0
1.12 1.4
V
2100 2730
175 230
14 18
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-217.E




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