9N90L Datasheet


Part Number

9N90L

Description

N-Channel MOSFET Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
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Features Datasheet pdf INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 9N90L ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltag e- : VDSS= 900V(Min) ·Fast Switching S peed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RAT INGS(TC=25℃) SYMBOL PARAMETER VALU E UNIT VDSS Drain-Source Voltage (VG S=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 900 ±20 9 V V A ID(puls) Pulse Drain Curren t 36 A Ptot Total Dissipation@TC=25 280 W Tj Max. Operating Junction Te mperature 150 ℃ Tstg Storage Tempera ture Range -55~150 ℃ ·THERMAL CHAR ACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.7 ℃/W isc website:www.i scsemi.cn 1 isc & iscsemi is registere d trademark PDF pdfFactory Pro www.fi neprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICA L CHARACTERISTICS (TC=25℃) isc Produ ct Specification 9N90L SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Volt.
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9N90L Datasheet
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
9N90L
·DESCRIPTION
·Drain Current ID= 9A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
900
±20
9
V
V
A
ID(puls)
Pulse Drain Current
36 A
Ptot Total Dissipation@TC=25
280 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.7 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




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