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9NM70-FDS Datasheet

N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD 9NM70-FDS 9A, 700V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 9NM70-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used a.

UTC
9NM70-FDS.pdf

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UTC 9NM70-FDS Datasheet
UNISONIC TECHNOLOGIES CO., LTD 9NM70-FDS 9A, 700V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 9NM70-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 0.8Ω @ VGS=10V, ID=4.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested  SYMBOL 1 Power MOSFET TO-251S  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9NM70L-TMS-T 9NM70G-TMS-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251S Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-417.A 9NM70-FDS Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to .





UNISONIC TECHNOLOGIES CO., LTD 9NM70-FDS 9A, 700V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 9NM70-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used a.

UTC
9NM70-FDS.pdf

Preview
Preview


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UTC 9NM70-FDS Datasheet
UNISONIC TECHNOLOGIES CO., LTD 9NM70-FDS 9A, 700V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 9NM70-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 0.8Ω @ VGS=10V, ID=4.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested  SYMBOL 1 Power MOSFET TO-251S  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9NM70L-TMS-T 9NM70G-TMS-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251S Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-417.A 9NM70-FDS Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to .







 

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